sihp22n60s www.vishay.com vishay siliconix s11-1882-rev. e, 26-sep-11 1 document number: 91373 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 s series power mosfet features ? generation one ?high e ar capability ? lower figure-of-merit r on x q g ? 100 % avalanche tested ? ultra low r on ? dv/dt ruggedness ? ultra low gate charge (q g ) ? compliant to rohs directive 2002/95/ec note * pb containing terminations are not rohs compliant, exemptions may apply applications ? pfc power supply stages ? hard switching topologies ? solar inverters ?ups ? motor control ?lighting ?server telecom notes a. repetitive rating; puls e width limited by maximum junction temperature. b. v dd = 50 v, starting t j = 25 c, l = 28.2 mh, r g = 25 ? , i as = 7 a. c. 1.6 mm from case. d. i sd ? i d , di/dt = 100 a/s, starting t j = 25 c. product summary v ds at t j max. (v) 650 r ds(on) max. at 25 c ( ? )v gs = 10 v 0.190 q g max. (nc) 98 q gs (nc) 17 q gd (nc) 25 configuration single n-channel mosfet g d s g d s to-220ab ordering information package to-220ab lead (pb)-free SIHP22N60S-E3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 20 gate-source voltage ac (f > 1 hz) 30 continuous drain current v gs at 10 v t c = 25 c i d 22 a t c = 100 c 13 pulsed drain current a i dm 65 linear derating fa ctor to-220ab 2 w/c single pulse avalanche energy b e as 690 mj repetitive avalanche energy a e ar 25 maximum power dissipation to-220ab p d 250 w drain-source voltage slope t j = 125 c dv/dt 37 v/ns reverse diode dv/dt d 5.3 operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperature) c for 10 s 300
sihp22n60s www.vishay.com vishay siliconix s11-1882-rev. e, 26-sep-11 2 document number: 91373 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note a. c oss eff. (tr) is a fixed capaci tance that gives the same charging time as c oss while v ds is rising from 0 % to 80 % v ds . thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient to-220ab r thja -62 c/w maximum junction-to-case (drain) to-220ab r thjc -0.5 specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 1 ma 600 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma - 0.70 - v/c gate-source threshold voltage (n) v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 1 a v ds = 600 v, v gs = 0 v, t j = 150 c - - 100 drain-source on-state resistance r ds(on) v gs = 10 v i d = 11 a - 0.160 0.190 ? forward transconductance a g fs v ds = 50 v, i d = 13 a - 9.4 - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz - 2810 - pf output capacitance c oss - 1480 - reverse transfer capacitance c rss -33- effective output capacitance (time related) c oss eff. (tr) a v gs = 0 v v ds = 0 v to 480 v - 155 - total gate charge q g v gs = 10 v i d = 22 a, v ds = 480 v - 75 110 nc gate-source charge q gs -17- gate-drain charge q gd -25- turn-on delay time t d(on) v dd = 380 v, i d = 22 a, r g = 9.1 ? , v gs = 10 v -2450 ns rise time t r - 68 100 turn-off delay time t d(off) - 77 115 fall time t f -5990 gate input resistance r g f = 1 mhz, open drain - 0.65 - ? drain-source body diode characteristics continuous source-dra in diode current i s mosfet symbol showing the integral reverse p - n junction diode --22 a pulsed diode forward current i sm --88 diode forward voltage v sd t j = 25 c, i s = 22 a, v gs = 0 v - - 1.2 v reverse recovery time t rr t j = 25 c, i f = i s , di/dt = 100 a/s, v r = 25 v - 462 690 ns reverse recovery charge q rr - 8.3 16 c reverse recovery current i rrm -3060a s d g
sihp22n60s www.vishay.com vishay siliconix s11-1882-rev. e, 26-sep-11 3 document number: 91373 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t j = 25 c fig. 2 - typical output characteristics, t j = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature v ds , drain-to-source voltage (v) i d , drain current (a) 0 10 20 30 40 50 04812162024 v gs top 15 v 14 v 13 v 12 v 11 v 10 v 9 v 8 v 7 v 6 v 5 v bottom 4 v t j = 25 c 4 v 0 6 12 18 24 30 0 4 8 12162024 4.0 v v ds , drain-to-source voltage (v) i d , drain current (a) v gs top 15 v 14 v 13 v 12 v 11 v 10 v 9 v 8 v 7 v 6 v 5 v bottom 4 v t j = 15 0 c i d , drain current (a) v gs , gate-to-source voltage (v) 0 10 20 30 40 50 60 46810 t j = 25 c t j = 150 c 2 0 0.5 1 1.5 2 2.5 3 3.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized) i d = 22 a v gs = 10 v
sihp22n60s www.vishay.com vishay siliconix s11-1882-rev. e, 26-sep-11 4 document number: 91373 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-dra in diode forward voltage fig. 8 - maximum safe operating area 10 100 1000 10 000 100 000 110100 capacitance (pf) v ds , drain-to-source voltage (v) v gs = 0 v, f = 1 mhz c iss = c gs + c gd ? c ds shorted c rss = c gd c oss = c ds + c gd c rss c iss c oss 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0102030405060708090100 v ds = 120 v v ds = 300 v v ds = 480 v i d = 22 a q g , total gate charge (nc) v gs , gate-to-source voltage (v) 0.0001 0.001 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i sd , reverse drain current (a) v gs = 0 v t j = 150 c t j = 25 c 0.1 1 10 100 1000 1 10 100 1000 10 000 100 s operation in this area limited by r ds(on) * t c = 25 c t j = 150 c single pulse v ds , drain-to-source voltage (v) i d , drain current (a) 1 ms 10 ms
sihp22n60s www.vishay.com vishay siliconix s11-1882-rev. e, 26-sep-11 5 document number: 91373 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - maximum drain curre nt vs. case temperature fig. 10 - drain-to-source breakdown voltage fig. 11 - normalized thermal transient impedance, junction-to-case fig. 11a - switching time test circuit fig. 11b - switching time waveforms fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms 0 5 10 15 20 25 25 50 75 100 125 150 i d , drain current (a) t c , case temperature (c) 550 575 600 625 650 675 700 725 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature ( c) v ds , drain-to-source breakdown voltage (v) 10 -4 10 -3 10 -2 0.1 1 normalized effective transient thermal impedance 0.01 0.1 1 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f r g i as 0.01 t p d.u.t l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p
sihp22n60s www.vishay.com vishay siliconix s11-1882-rev. e, 26-sep-11 6 document number: 91373 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13a - basic ga te charge waveform fig. 13b - gate charge test circuit fig. 14 - for n-channel vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91373 . q gs q gd q g v g charge v gs d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
package information www.vishay.com vishay siliconix revison: 08-oct-12 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab notes * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm ? xian and mingxin actual photo m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471
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